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Agilent MSA-2743 Cascadable Silicon Bipolar Gain Block MMIC Amplifier
Data Sheet
Applications * Cellular/PCS/WLL basestations * Wireless data/ WLAN * Fiber-optic systems * ISM Description Agilent Technologies' MSA-2743 is a low current silicon gain block MMIC amplifier housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Providing a nominal 15.5 dB gain at up to 15 dBm Pout, this device is ideal for small-signal gain stages or IF amplification. The Darlington feedback structure provides inherent broad bandwidth performance. The 25 GHz ft fabrication process results in a device with low current draw and useful operation to past 3 GHz. Typical Biasing Configuration
VCC = 5 V Rc C bypass
Features * Small signal gain amplifier * Low current draw * Wide bandwidth * 50 Ohms input & output * Low cost surface mount small plastic package SOT-343 (4 lead SC-70) * Tape-and-reel packaging option available
* General purpose gain block amplifier
Surface Mount Package SOT-343/4-lead SC70
Pin Connections and Package Marking Specifications 2 GHz; 5V, 50 mA (typ.) * 15.5 dB associated gain
GROUND RF OUT/BIAS GROUND
27x
* 15 dBm P1dB * 4 dB noise figure * 28 dBm output IP3 * Useful gain past 3 GHz
C block
MSA
RFin
Note: Top View. Package marking provides orientation and identification. `x' is a character to identify date code.
RFC C block IN
OUT Vd = 3.9 V
MSA-2743 Absolute Maximum Ratings [1] Symbol
Id Pdiss Pin max. TJmax TSTG jc
Parameter
Device Current Total Power Dissipation [2] RF Input Power Junction Temperature Storage Temperature Thermal Resistance [3]
Units
mA mW dBm C C C/W
Absolute Maximum
80 330 20 150 -65 to 150 115
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 25C. Derate 8.7 mW/C for TL > 112C. 3. Thermal resistance measured using 150C Liquid Crystal Measurement method.
Electrical Specifications TA = +25C, Id = 50 mA, ZO = 50, RF parameters measured in a test circuit for a typical device Symbol
Vd GP GP F3dB VSWRin VSWRout NF P1dB OIP3 DV/dT
Parameter and Test Condition
Device Voltage, Id =50 mA Power Gain (|S21| ) Gain Flatness 3 dB Bandwidth Input Voltage Standing Wave Ratio Output Voltage Standing Wave Ratio 50 Noise Figure Output Power at 1 dB Gain Compression Output Third Order Intercept Point Device Voltage Temperature Coefficient
2
Frequency
900 MHz 2 GHz 0.1 to 2 GHz
Units
V dB
Min.
3.5 14
Typ. [1]
3.9 16 15.5 0.29 6.2 1.4:1 1.2:1
Max.
4.3 17
0.04 0.18 0.17
dB GHz
0.1 to 6 GHz 0.1 to 6 GHz 900 MHz 2 GHz 900 MHz 2 GHz 900 MHz 2 GHz dB dBm dBm mV/C
3.9 4.1 16.1 15 31 28 -4.4
0.19 0.16 0.05 0.08 0.08 0.17
Notes: 1. Typical value determined from a sample size of 500 parts from 6 wafers. 2. Standard deviation is based on 500 samples taken from 6 different wafers. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
Input
50 Ohm Transmission Line (0.5 dB loss)
DUT
50 Ohm Transmission Line Including Bias T (1.05 dB loss)
Output
Block diagram of 2 GHz production test board used for gain measurements. Circuit losses have been de-embedded from actual measurements.
MSA-2743 Typical Performance
18 16 14
P1dB (dBm)
18 16 14 12
NF (dB)
7.5 7 6.5 6 5.5 5 4.5 4 3.5 3 0 2 4 6 8 10 12 0 2 4 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz)
12
GAIN (dB)
10 8 6 4 2 0 0 28 4 6 8 10 12 FREQUENCY (GHz)
10 8 6 4 2 0
Figure 1. Gain vs. Frequency at Id = 50 mA.
Figure 2. P1dB vs. Frequency at Id = 50 mA.
Figure 3. NF vs. Frequency at Id = 50 mA.
35 30 25
OIP3 (dBm) Id (mA)
90 80
16.5 16
70 60 50 40 30 20 5 0 0 2 4 6 8 10 12 FREQUENCY (GHz)
20 15 10
GAIN (dB)
-40C +25C +85C
15.5 15 14.5 14
-40C +25C +85C
10 0 0 1 2 Vd (V) 3 4 5 13.5 0 20 40 Id (mA) 60 80 100
Figure 4. OIP3 vs. Frequency at Id = 50 mA.
Figure 5. Id vs. Vd and Temperature.
Figure 6. Gain vs. Id and Temperature at 2 GHz.
4.8 4.6 4.4
P1dB (dBm)
20 18 16
OIP3 (dBm)
32 30 28 26 24 22 20 18 16 14 0 20 40 Id (mA) 60 80 100 0 20 40 Id (mA) 60 80 100
-40C +25C +85C
4.2
NF (dB)
14 12 10 8
-40C +25C +85C
4 3.8 3.6 3.4 3.2 3 0 20 40 Id (mA) 60 80 100
-40C +25C +85C
6 4 2
Figure 7. NF vs. Id and Temperature at 2 GHz.
Figure 8. P1dB vs. Id and Temperature at 2 GHz.
Figure 9. OIP3 vs. Id and Temperature at 2 GHz.
MSA-2743 Typical Performance, continued
18 16 14
GAIN (dB)
0.1 0.9 1.9 2.4 5.8 7 8 9
8
10 9
25 20 15 10 5 0 -5
0.1 0.9 1.9 2.4
7
8
12 10 8
NF (dB)
6
7 5.8
OIP3 (dBm)
4 5.8 7 8 9 10
5
2.4 1.9 0.9 0.1
10
4
6 4 0 10 20 30 40 50 60 70 80 90 Id (mA) 3 0 20 40 Id (mA) 60
80
100
0
20
40 Id (mA)
60
80
100
Figure 10. Gain vs. Id and Frequency (GHz).
Figure 11. NF vs. Id and Frequency (GHz).
Figure 12. P1dB vs. Id and Frequency (GHz).
40 35 30
OIP3 (dBm)
0.5 0.9
0 -5 -10
ORL (dB)
1.9 2.4
0 -5 -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 0 2 4 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz)
50 mA 65 mA 80 mA
25 20 15 10 5 0 20 40 Id (mA) 60 80 100
4 5.8 7 8 9 10
IRL (dB)
-15 -20 -25 -30 -35 -40
50 mA 65 mA 80 mA
Figure 13. OIP3 vs. Id and Frequency (GHz).
Figure 14. Input Return Loss vs. Id and Frequency.
Figure 15. Output Return Loss vs. Id and Frequency.
MSA-2743 Typical Scattering Parameters TA = 25C, Id = 50 mA Freq (GHz)
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
s11 Mag
0.022 0.042 0.061 0.068 0.1 0.124 0.13 0.155 0.172 0.179 0.17 0.164 0.155 0.147 0.155 0.185 0.213 0.242 0.276 0.328 0.401 0.496 0.583
s11 Ang
158 102.4 57.9 51.3 26.5 11.6 8.2 -6.4 -17.7 -28.2 -41.3 -57.6 -76.6 -100.9 -129.7 -155.9 -177.8 160 139.1 120.4 101.3 82.5 65
s21 (dB)
16.15 16.11 16.01 15.98 15.8 15.63 15.58 15.33 15.04 14.75 14.47 14.2 13.9 13.59 13.28 12.9 12.5 12.02 11.52 11.04 10.52 9.93 9.04
s21 (Mag)
6.423 6.387 6.319 6.296 6.169 6.044 6.01 5.842 5.652 5.461 5.29 5.13 4.955 4.783 4.613 4.415 4.215 3.991 3.765 3.563 3.357 3.139 2.832
s21 (Ang)
176.8 164.3 151.9 148.8 133.6 121.7 118.7 104.1 89.8 75.9 62.2 48.4 34.6 21.1 7.4 -6.5 -20.1 -33.8 -47.4 -60.8 -74.7 -89.5 -104.5
s12 (Mag)
0.104 0.103 0.1 0.1 0.097 0.095 0.095 0.093 0.092 0.091 0.091 0.091 0.091 0.091 0.094 0.097 0.104 0.112 0.121 0.136 0.157 0.18 0.197
s12 (Ang)
-0.8 -4.1 -6.5 -7.1 -9.2 -10.5 -10.8 -12.2 -13.5 -14.6 -15.8 -16.7 -17.6 -17.8 -17.5 -17.5 -17.3 -18.8 -20.4 -21.5 -25.9 -33.6 -43.2
s22 (Mag)
0.065 0.068 0.085 0.089 0.103 0.109 0.109 0.103 0.083 0.064 0.058 0.064 0.07 0.084 0.095 0.118 0.147 0.167 0.189 0.231 0.295 0.385 0.477
s22 (Ang)
-5.4 -26.7 -52.7 -57.3 -73.1 -82.9 -85.1 -99.9 -117.6 -137 -165.5 166.8 153.9 152.6 149.9 150.2 144.2 132.9 120.1 109.2 95 80.5 65.2
K
1.1 1.1 1.1 1.1 1.1 1.1 1.2 1.2 1.2 1.2 1.2 1.3 1.3 1.3 1.3 1.3 1.3 1.2 1.2 1.1 0.9 0.8 0.7
Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each ground lead contact point, one via on each side of that point.
MSA-2743 Typical Scattering Parameters TA = 25C, Id = 65 mA Freq (GHz)
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
s11 Mag
0.034 0.049 0.061 0.067 0.097 0.12 0.126 0.151 0.17 0.177 0.167 0.161 0.152 0.145 0.156 0.188 0.218 0.25 0.285 0.341 0.414 0.51 0.596
s11 Ang
165.2 115.3 69.2 61.4 32.8 16.2 12.4 -3.5 -15.7 -26.9 -40.7 -57.8 -78 -103.3 -133.3 -159.4 178.6 156.6 135.9 117.4 98.7 80.1 63
s21 (dB)
16.32 16.27 16.18 16.15 15.97 15.79 15.75 15.5 15.21 14.9 14.62 14.35 14.04 13.72 13.4 13 12.58 12.08 11.56 11.05 10.51 9.89 8.97
s21 (Mag)
6.546 6.511 6.442 6.42 6.29 6.162 6.128 5.955 5.758 5.559 5.382 5.215 5.034 4.854 4.675 4.467 4.255 4.02 3.784 3.57 3.353 3.122 2.808
s21 (Ang)
176.8 164.2 151.7 148.6 133.3 121.3 118.3 103.6 89.1 75.1 61.3 47.4 33.5 19.9 6.1 -7.9 -21.7 -35.5 -49.1 -62.6 -76.5 -91.4 -106.3
s12 (Mag)
0.103 0.101 0.099 0.098 0.096 0.095 0.094 0.093 0.092 0.091 0.091 0.091 0.091 0.091 0.093 0.097 0.103 0.112 0.121 0.137 0.158 0.182 0.199
s12 (Ang)
-0.7 -3.9 -6.2 -6.7 -8.7 -10.1 -10.4 -11.8 -13.1 -14.3 -15.6 -16.6 -17.5 -17.7 -17.2 -17.1 -16.6 -18 -19.6 -20.8 -25.4 -33.3 -43
s22 (Mag)
0.05 0.054 0.072 0.075 0.089 0.094 0.095 0.088 0.068 0.049 0.042 0.049 0.054 0.067 0.08 0.106 0.138 0.16 0.184 0.228 0.293 0.384 0.476
s22 (Ang)
-5.7 -28.3 -55.9 -60.5 -75.2 -83.9 -85.9 -100 -117.3 -136.7 -168.5 161.1 150.3 154.3 154.4 156 149.6 137.6 124.3 112.5 97.3 82 66.2
K
1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.2 1.2 1.2 1.2 1.3 1.3 1.3 1.3 1.3 1.3 1.2 1.2 1 0.9 0.8 0.7
Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each ground lead contact point, one via on each side of that point.
MSA-2743 ADS Model
INSIDE Package
Var Ean
VAR VAR1 K=5 Z1=85 Z2=30 C C1 C=0.112 pF
INPUT
Port IN Num=1 VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001
TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L1 L=0.693 nH R=0.001
TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.377 nH R=0.001 C C2 C=0.2 pF L L5 L=0.492 nH R=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001
VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
GROUND
Port Gnd2 Num=4
TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001
die_MSA27F X1
GROUND
Port Gnd1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.298 nH R=0.001
VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
OUTPUT
Port Out Num=3
VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001
MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil
Note: Vias are not part of the package. They are only added during simulation to account for the vias in the test fixture.
Port P2 Num=2 R R1 R=410 Ohm
Q1_MSA27F X1 Port P1 Num=1 Q2_MSA27F X2
R R2 R=430 Ohm
R R3 R=138 Ohm
R R4 R=5 Ohm
C C1 C=4.0 pF
Port P3 Num=3
Q1 MSA-27 Transistor Model
Port P1 Num=1 R RCX R=6.21 Ohm TC1=0.113e-02 C CCOX C=1.77e-14 F Diode DIODEI Model=DIODEMI Area= Region= Temp= Mode=nonlinear Diode_Model DIODEMI Is=1.457e-17 Rs= N=1 Tt= Cjo=2.379e-14 Vj=0.729 M=0.44 Eg= Imox= xti= Kf= Af= Fc=0.8 Bv= Ibv=
R RBX R=3.68 Ohm TC1=0.14e-02 Port P2 Num=2 CEOX C=6.59e-15F
Diode DIODE3 Model=DIODEM3 Area= Region= Temp= Mode=nonlinear
Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
Diode DIODE2 Model=DIODEM2 Area= Region= Temp= Mode=nonlinear
BJT4_NPN BJTl Model=BJTMI Area=1 Region= Temp= Mode=nonlinear
R RE R=1.61 Ohm
BJT_Model BJTMI NPN=yes PNP=no Bf=le6 lkf=1.548e-01 lse=7.452e-20 Ne=1.006 Vaf=44 Nf=1 Tf=5.381e-12 Xtf=20 Vtf=0.8 Itf=0.233 Ptf=22 Xtb=0.7 Approxqb=yes
Port R P3 RSE Num=3 R=1 Ohm Br=1 Ikr=1.1e-2 Isc= Nc=2 Var=3.37 Nr=1.005 Tr=4e-9 Eg=1.17 Is=4.7e-18 Imax= Xti=3 Tnom=21 Nk= Iss= Ns= Cjc=2.916e-14 Vjc=0.6775 Mjc=0.3319 Xcjc=4.405e-1 Fc=0.8 Cje=7.859e-14 Vje=0.9907 Mje=0.5063 Cjs= Vjs= Mjs= Rb=8.863 Irb=8.59e-5 Rbm=0.1 RbModel=MDS Re= Rc= Kf=1.489e-23 Af=2 Kb= Ab= Fb= Ffe= Lateral=no AllParams=
Diode_Model DIODEM2 Is=1e-24 Rs= N=1.0029 Tt= Cjo=2.368e-14 Vj=0.8971 M=2.292e-1 Eg= Imox= Xti= Kf= Af= Fc=0.8 Bv= Ibv=
Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
Diode_Model DIODEM3 Is=1e-24 Rs=2.147e2 N= Tt= Cjo=9.315e-14 Vj=0.6 M=0.42 Eg= Imox= Xti= Kf= Af= Fc=0.8 Bv= Ibv=
Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
Q2 MSA-27 Transistor Model
Port P1 Num=1 R RCX R=1.544 Ohm TC1=0.113e-02 C CCOX C=6.079e-14 F Diode DIODEI Model=DIODEMI AreaRegion= Temp= Mode=nonlinear Diode DIODE3 Model=DIODEM3 Area= Region= Temp= Mode-nonlinear BJT4_NPN BJTl Model=BJTMI Area=4 Region= Temp= Mode=nonlinear Diode_Model DIODEMI Is=5.87e-17 Rs= N=1 Tt= Cjo=9.919e-14 Vj=0.729 M=0.44 Eg= Imox= xti= Kf= Af= Fc=0.8 Bv= Ibv= Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
R RBX R=0.584 Ohm TC1=0.14e-02 Port P2 Num=2 CEOX C=2.638e -14 F
Diode DIODE2 Model=DIODEM2 Area= Region= Temp= Mode=nonlinear
R RE R=0.742 Ohm
BJT_Model BJTMI NPN=yes PNP=no Bf=le6 lkf=6.191e-01 lse=2.981e-19 Ne=1.006 Vaf=44 Nf=1 Tf=5.38e-12 Xtf=20 Vtf=0.8 Itf=9.306e-01 Ptf=22 Xtb=0.7 Approxqb=yes
Port P3 Num=3 Br=1 kr=4.6e-02 Isc= Nc=2 Var=3.37 Nr=1.005 Tr=4e-9 Eg=1.17 Is=1.88e-17 Imax= Xti=3 Tnom=21 Nk= Iss= Ns= Cjc=5.415e-14 Vjc=0.6775 Mjc=0.3319 Xcjc=4.405e-1 Fc=0.8 Cje=3.27e-13 Vje=0.9907 Mje=0.5063 Cjs= Vjs= Mjs= Rb=2.216 Irb=3.436e-4 Rbm=2.5e-02 RbModel=MDS
R RSE R=1 Ohm
Diode_Model DIODEM2 Is=1e-24 Rs= N=1.0029 Tt= Cjo=9.596e-14 Vj=0.8971 M=2.292e-1 Eg= Imox= Xti= Kf= Af= Fc=0.8 Bv= Ibv=
Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
Re= Rc= Kf=9.305e-25 Af=2 Kb= Ab= Fb= Ffe= Lateral=no AllParams=
Diode_Model DIODEM3 Is=1e-24 Rs=1.687e2 N= Tt= Cjo=2.2e-13 Vj=0.6 M=0.42 Eg= Imox= Xti= Kf= Af= Fc=0.8 Bv= Ibv=
Isr= Nr= Ikf= Nbv= Ibvl= Nbvl= Tnom=21 Ffe= AllParams=
8
MSA-2743 RFIC Amplifier Description
Agilent Technologies' MSA-2743 is a low current silicon gain block RFIC amplifier housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Providing a nominal 15.5 dB gain at up to +18.5 dBm Pout, this device is ideal for small-signal gain stages or IF amplification. The Darlington feedback structure provides inherent broad bandwidth performance. The 25 GHz f t fabrication process results in a device with low current draw and useful operation above 3 GHz. A feature of the MSA-2743 is its broad bandwidth that is useful in many satellite-based TV, cable TV and datacom systems. In addition to use in buffer and driver amplifier applications in the TV market, the MSA-2743 will find many applications in wireless communication systems. Application Guidelines The MSA-2743 is very easy to use. For most applications, all that is required to operate the MSA-2743 is to apply 50 mA to 70 mA to the RF Output pin. RF Input and Output The RF Input and Output ports of the MSA-2743 are closely matched to 50. DC Bias The MSA-2743 is a current-biased device that operates from a 50 mA to 70 mA current source. Curves of typical performance as a function of bias current are shown in section one of the data sheet. Figure 1 shows a typical implementation of the MSA-2743. The supply current for the MSA-2743 must be applied to the RF Output
pin. The power supply connection to the RF Output pin is achieved by means of a RF choke (inductor). The value of the RF choke must be large relative to 50 in order to prevent loading of the RF Output. The supply voltage end of Rc is bypassed to ground with a capacitor. Blocking capacitors are normally placed in series with the RF Input and the RF Output to isolate the DC voltages on these pins from circuits adjacent to the amplifier. The values for the blocking and bypass capacitors are selected to provide a reactance at the lowest frequency of operation that is small relative to 50.
Vd C2
This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the high frequency RF performance of the MSA-2743. The layout is shown with a footprint of a SOT-343 package superimposed on the PCB pads for reference. Starting with the package pad layout in Figure 3, an RF layout similar to the one shown in Figure 3 is a good starting point for microstripline designs using the MSA-2743 amplifier. PCB Materials FR-4 or G-10 type materials are good choices for most low cost wireless applications using single or multi-layer printed circuit boards. Typical single-layer board thickness is 0.020 to 0.031 inches. Circuit boards thicker than 0.031 inches are not recommended due to excessive inductance in the ground vias. This is discussed in more detail in the section on RF grounding. Applications Example The printed circuit layout in Figure 3 is a multi-purpose layout that will accommodate components for using the MSA-2743 for RF inputs from DC through 3 GHz. This layout is a microstripline design (solid groundplane on the backside of the circuit board) with 50 interfaces for the RF input and output. The circuit is fabricated on 0.031-inch thick FR-4 dielectric material. Plated through holes (vias) are used to bring the ground to the top side of the circuit where needed. Multiple vias are used to reduce the inductance of the paths to ground.
27x
C1
RFC Vcc Rc C3
Figure 1. Schematic Diagram with Bias Connections.
PCB Layout A recommended PCB pad layout for the miniature SOT-343 (SC-70) package that is used by the MSA-2743 is shown in Figure 2.
1.30 0.051 0.80 0.031
0.50 0.020
1.71 0.067
.080 0.031 1.15 0.045
Figure 2. PCB Pad Layout for MSA-2743. Package dimensions in mm/inches.
Agilent Technologies IP 4/00 MSA-2X43
IN OUT
Vcc
Figure 3. Multi-purpose Evaluation Board.
The amplifier and related components are assembled onto the printed circuit board as shown in Figure 6. The MSA-2X43 circuit board is designed to use edgemounting SMA connectors such as Johnson Components, Inc., Model 142-0701-881. These connectors are designed to slip over the edge of 0.031-inch thick circuit boards and obviate the need to mount PCBs on a metal base plate for testing. The center conductors of the connectors are soldered to the input and output microstrip lines. The ground pins are soldered to the ground plane on the back of the board and to the top ground pads. DC blocking capacitors are required at the input and output of the IC. The values of the blocking capacitors are determined by the lowest frequency of operation for a particular application. The capacitor's reactance is chosen to be 10% or less of the amplifier's input or output impedance at the lowest operating frequency. For example, an amplifier to be used in an application covering the 900 MHz band would require an input blocking capacitor of at least 39 pF, which is 4.5 of reactance at 900 MHz. The Vcc connection to the amplifier must be RF bypassed by placing a capacitor to ground at the bias pad of the board. Like the DC blocking capacitors, the value
of the Vcc bypass capacitor is determined by the lowest operating frequency for the amplifier. Space is available on the circuit board to add a bias choke, bypass capacitors, and collector resistors. The MSA series of ICs requires a bias resistor to ensure thermal stability. The bias resistor value is calculated from the operating current value, device voltage and the supply voltage; see equation below. When applying bias to the board, start at a low voltage level and slowly increase the voltage until the recommended current is reached. Both power and gain can be adjusted by varying Id. Rc = Vcc - Vd Id
taken into account. The characterization data in section one shows the relationship between Vd and Id over temperature. At lower temperatures the value of Vd increases. The increase in Vd at low temperatures and production variations may cause potential problems for the amplifier performance if it is not taken into account. One solution would be to increase the voltage supply to have at least a 4V drop across the bias resistor Rc. This will guarantee good temperature stability. Table 1 shows the effects of Rc on the performance of the MSA-2743 over temperature. An alternative solution to ensure good temperature stability without having a large voltage drop across a resistor would be to use an active bias circuit as shown in Figure 4. The resistors R1 and the PNP transistor connected to form a diode by connecting the base and collector together and R2 form a potential diver circuit to set the base voltage of the bias PNP transistor. The diode connected PNP transistor is used to compensate for the voltage variation of the base-emitter junction with temperature of the bias PNP transistor. R3 provides a bleed path for any excess bias; it
Where: Vcc = The power supply voltage applied to Rc (volts) Vd = The device voltage (volts) Id = The quiescent bias current drawn by the device Notes on Rc Selection The value of Rc is dependant on Vd, any production variation in Vd will have an effect on Id. As the gain and power performance of the MSA-2743 may be adjusted by varying Id this will have to be
Table 1. Effects of Rc on Performance over Temperature. Device voltage = 3.9 V nominally at 25C.
Voltage Drop, volts
0
Resistor Value, Ohms
0
Temperature, C
0 25 85 0 25 85 0 25 85 0 25 85
Bias Current, mA
41.8 50.0 66.8 47.3 50.0 56.5 47.8 50.0 53.5 49.1 50.0 51.8
Power Gain @ 2.0 GHz, dB
15.2 15.1 15.0 15.3 15.1 14.9 15.2 15.1 14.8 15.3 15.1 14.9
1.35
27
2.35
47
6.0
120
is a safety feature and can be omitted from the circuit, a typical value for R3 is 1K. Rc is a feedback element that keeps Id constant. The value of Rc is approximated by assuming a 0.5V drop across it; see equation below. For 50 mA Id, 5Volt Vcc bias, a typical value for R1 is 560 and R2 is 110. A CAD program such as Agilent Technologies ADS (R) is recommended to determine the values of R1 and R2 at other bias levels. The value of the RF choke should be large compared to 50, typical value for a 1.9 GHz amplifier would be 22 nH. The DC blocking capacitors are calculated as described above. A typical value for C3 would be 1.0 uF. Rc = 0.5 Id The active bias solution will only require about a 1.3V difference between Vcc and Vd for good bias stability over temperature. For more details on the active bias circuit please refer to application note AN-A003 Biasing MODAMP MMICs.
Vd C2
output of the MSA-2743 is already well matched to 50 and no additional matching is needed.
C2=18 pF
Table 2. Component Parts List for the MSA-2743 Amplifier at 1.9 GHz. R1 RFC C1,C2 C3 27 chip resistor 22 nH LL1608-FH22N 18 pF chip capacitor 330 pF chip capacitor
27x
C1=18 pf
RFC= 22 nH Vcc=5.25V Rc=27 C3=330 pF
Figure 5. Schematic of 1.9 GHz Circuit.
A schematic diagram of the complete 1.9 GHz circuit with DC biasing is shown in Figure 5. DC bias is applied to the MSA-2743 through the RFC at the RF Output pin. The power supply connection is bypassed to ground with capacitor C3. Provision is made for an additional bypass capacitor, C4, to be added to the bias line near the +5 volt connection. C4 will not normally be needed unless several stages are cascaded using a common power supply. The input terminal of the MSA-2743 is not at ground potential, an input DC blocking capacitor is needed. The values of the DC blocking and RF bypass capacitors should be chosen to provide a small reactance (typically < 5 ohms) at the lowest operating frequency. For this 1.9 GHz design example, 18 pF capacitors with a reactance of 4.5 ohms are adequate. The reactance of the RF choke (RFC) should be high (i.e., several hundred ohms) at the lowest frequency of operation. A 22 nH inductor with a reactance of 262 ohms at 1.9 GHz is sufficiently high to minimize the loss from circuit loading.
The completed 1.9 GHz amplifier for this example with all components and SMA connectors assembled is shown in Figure 6.
Agilent Technologies IP 4/00 MSA-2X43
IN OUT
Figure 6. Complete 1.9 GHz Amplifier.
27x
C3 C1
RFC
Vcc R3 R1 Rc R2
Performance of MSA-2743 1.9 GHz Amplifier The amplifier is biased at a Vcc of 5.25 volts, Id of 50 mA. The measured gain, noise figure, input and output return loss of the completed amplifier is shown in Figure 7. Noise figure is a nominal 4.0 to 4.1 dB from 1800 through 2000 MHz. Gain is a minimum of 15.1 dB from 1800 MHz through 2000 MHz. The amplifier output intercept point (OIP3) was measured at a nominal +28.5 dBm. P-1dB measured +15.0 dBm.
20
GAIN, NOISE FIGURE, INPUT and OUTPUT RETURN LOSS (dB)
27x
Vcc
Figure 4. Active Bias Circuit.
10
1.9 GHz Design To illustrate the simplicity of using the MSA-2743, a 1.9 GHz amplifier for PCS type applications is presented. The amplifier uses a 5.25V, 50 mA supply. The input and
0
-10
-20
-30 1.5
1.7
1.9 FREQUENCY (GHz)
2.1
2.3
Figure 7. Gain, Noise Figure, Input and Output Return Loss Results.
GAIN, NOISE FIGURE, INPUT and OUTPUT RETURN LOSS (dB)
900 MHz Design The 900 MHz example follows the same design approach that was described in the previous 1900 MHz design. A schematic diagram of the complete 900 MHz circuit is shown in Figure 8. And the component part list is show in Table 3.
C2=39 pF
20 10 0 -10 -20 -30 -40 0.4
0.6
0.8
1
1.2
1.4
27x
C1=39 pf
RFC= 47 nH Vcc=5.25V Rc=20 C3=680 pF
FREQUENCY (GHz)
Figure 9. Gain, Noise Figure, Input and Output Return Loss Results.
Figure 8. Schematic of 900 MHz Circuit. Table 3. Component Parts List for the MSA-2743 Amplifier at 900 MHz. R1 RFC C1,C2 C3 20 chip resistor 47 nH LL1608-FH47N 39 pF chip capacitor 680 pF chip capacitor Table 4. Input and Output Inductor Values for Various Operating Frequencies.
Designs for Other Frequencies The same basic design approach described above for 1.9 GHz can be applied to other frequency bands. Inductor values for matching the input for low noise figure are shown in Table 4.
Notes on RF Grounding The performance of the MSA series is sensitive to ground path inductance. Good grounding is critical when using the MSA-2743. The use of via holes or equivalent minimal path ground returns as close to the package edge as is practical is recommended to assure good RF grounding. Multiple vias are used on the evaluation board to reduce the inductance of the path to ground. The effects of the poor grounding may be observed as a "peaking" in the gain versus frequency response, an increase in input VSWR, or even as return gain at the input of the RFIC. A Final Note on Performance Actual performance of the MSA RFIC mounted on the demonstration board may not exactly match data sheet specifications. The board material, passive components, and connectors all introduce losses and parasitics that may degrade device performance, especially at higher frequencies. Some variation in measured results is also to be expected as a result of the normal manufacturing distribution of products. Statistical Parameters Several categories of parameters appear within this data sheet. Parameters may be described with values that are either "minimum or maximum," "typical," or "standard deviations."
Performance of MSA-2743 900 MHz Amplifier The amplifier is biased at a Vcc of 5.25 volts, Id of 70 mA. The measured gain, noise figure, input and output return loss of the completed amplifier is shown in Figure 9. Noise figure is a nominal 3.8 to 4.0 dB from 800 through 1000 MHz. Gain is a minimum of 17.1 dB from 800 MHz through 1000 MHz. The input return loss at 900 MHz is 21.5 dB with a corresponding output return loss of 29.9 dB. The amplifier output intercept point (OIP3) was measured at a nominal +31.4 dBm. P-1dB measured +18.5 dBm.
Frequency 400 MHz 900 MHz 1900 MHz 2.4 GHz 3.5 GHz 5.8 GHz
C1 & C2, pF 88 39 18 15 18 1.8
RFC, nH 100 47 22 18 15 6.8
C3, pF 1500 680 330 270 22 10
Actual component values may differ slightly from those shown in Table 3 due to variations in circuit layout, grounding, and component parasitics. A CAD program such as Agilent Technologies' ADS (R) is recommended to fully analyze and account for these circuit variables.
The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on of a minimum of 500 parts taken from six non-consecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g., fits the standard bell curve. Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MSA-2743, these parameters are: Gain (Gtest) and Device Voltage (Vd). Each of the guaranteed parameters is 100% tested as part of the manufacturing process. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as S-parameters or Noise Parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate amplifier circuit using the MSA-2743, but to also evaluate and optimize tradeoffs that affect a complete wireless system, the standard deviation () is provided for many of the Electrical Specifications parameters (at 25C) in addition to the mean. The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation.
Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 10 for example, the probability of a parameter being between 1 is 68.3%; between 2 is 95.4%; and between 3 is 99.7%.
Input Reference Plane
Test Fixture Vias
27x
Test Fixture Vias Output Reference Plane TEST FIXTURE
68%
Figure 11. Phase Reference Planes.
95% 99% -3 -2 -1 Mean +1 +2 (), typ Parameter Value +3
Figure 10. Normal Distribution.
Phase Reference Planes The positions of the reference planes used to specify S-parameters for the MSA-2743 are shown in Figure 11. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit for the RF input and RF output/bias. As noted under the s-parameter table in section one of the data sheet the MSA-2743 was tested in a fixture that includes plated through holes through a 0.025" thickness printed circuit board. Due to the complexity of de-embedding these grounds, the S-parameters include the effects of the test fixture grounds. Therefore, when simulating the performance of the MSA-2743 the added ground path inductance should be taken into account. For example if you were designing an amplifier on 0.031" thickness printed circuit board material, only the difference in the printed circuit board thickness needs to be included in the simulation, i.e. 0.031" - 0.025" = 0.006".
SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT-343 package, will reach solder reflow temperatures faster than those with a greater mass. The MSA-2743 is qualified to the time-temperature profile shown in Figure 12. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation
of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 235C. These parameters are typical for a surface mount assembly process for the MSA-2743. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. Electrostatic Sensitivity RFICs are electrostatic discharge (ESD) sensitive devices. Although the MSA-2743 is robust in design, permanent damage may occur to these devices if they are subjected to high energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the
human body and on test equipment) can discharge without detection and may result in degradation in performance, reliability, or failure. Electronic devices may be subjected to ESD damage in any of the following areas: * Storage & handling * Inspection & testing * Assembly * In-circuit use The MSA-2743 is a ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. References Performance data for MSA series of amplifiers are found in the CD ROM Catalog or http:// www.agilent.com/view/rf
Application Notes AN-S001: Basic MODAMP MMIC Circuit Techniques AN-S002: MODAMP MMIC Nomenclature AN-S003: Biasing MODAMP MMICs AN-S011: Using Silicon MMIC Gain Blocks as Transimpedance Amplifiers AN-S012: MagIC Low Noise Amplifiers
250 TMAX 200
TEMPERATURE (C)
150 Reflow Zone 100 Preheat Zone 50 0 0 60 120 180 240 300 TIME (seconds) Cool Down Zone
Figure 12. Surface Mount Assembly Profile.
Ordering Information Part Number
MSA-2743-TR1 MSA-2743-TR2 MSA-2743-BLK
No. of Devices
3000 10000 100
Container
7" Reel 13"Reel antistatic bag
Package Dimensions Outline 43 SOT-343 (SC70 4-lead)
1.30 (0.051) BSC 1.30 (.051) REF
2.60 (.102) E E1 1.30 (.051)
0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF
0.85 (.033)
A
b TYP
A1 L DIMENSIONS
C TYP
SYMBOL A A1 b C D E e h E1 L
MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
Tape Dimensions For Outline 4T
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
www.semiconductor.agilent.com Data subject to change. Copyright (c) 2000 Agilent Technologies, Inc. 5980-2400E (9/00)

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